JTG Proceedings

• 2023

  December Agenda – Recent Studies of Ion Implantation Technology Issues

  Design and System Technology Co-Optimization, Shela Aboud, Synopsys

  Metrologies for Study of Ion Implanted Semiconductors, Temel  Buyuklimanli, EurofinsEAG

  Strain Effects for Ge and Sn Implants, John Borland, JOB Technologies

  Profiles and Defects in Channeled and Random Orientation 10 MeV Dopant Implants in Si(100), Michael Current, Current Sci

  Light-ion Neutron Levels in High-energy Implanters, Jeremy Turcaud, Coherent

  Slow Release Anti-bacterial and Hard-wearing Orthopedic Prosthetics Coatings, Babak Adibi, Surf-Ion

  Summary of IIT22 and News About  IIT24, Susan Felch, Lead Chair of IIT22

• 2020

  February Agenda – NCCAVS User Group Joint Technical Symposium – The Quantum World
  NCCAVS 2020 Poster Session – Results

  • Modeling Systems with Quantum Computers, Rudy J. Wojtecki, IBM Research – Almaden (N/A)
  • Optimizing Quantum Optimization Algorithms for Noisy Quantum Computers, Davide Venturelli, USRA Research Institute for Advanced Computer Science (Pending)
  • Enterprise Software to accelerate the quantum revolution, Christopher T. Brown, Zapata Computing, Inc.
  • Materials Engineering for Quantum Information Technology, Robert Jan Visser, Applied Materials (Pending)
  • Introduction of a new technology platform to enable scalable fabrication of single silicon vacancy defect arrays, Andre Linden, Raith America, Inc.
  • Thin Film Fabrication of Quantum Upconverting Sensors for Dark Matter Detection, Dale Li, SLAC National Accelerator Lab
  • Quantum Measurement Protocols for Upconverting Sensors, Stephen Kuenstner, Stanford University
  • Superconducting quantum coherent circuits: introduction, challenges, and near-term applications, John Mark Kreikebaum, Lawrence Berkeley National Laboratory & University of California, Berkeley

2019

February Agenda-NCCAVS Users Group Joint Technical Symposium

• Next Generation Energy Storage Technologies, Subramanya (Subra) Herle, Applied Materials
• Solid-state Thin Film Batteries Take a Page Out of the 3D Transistor Play Books, J.R. Gaines, Kurt J. Lesker Company
• Advances and Challenges with Rechargeable Lithium-Air Batteries, Dave Sopchak, Coulombic, Inc.
• Peak Power Impact on Battery Cycle Life, Naoki Matsumura, Intel
• Directly Converting Heat to Electricity using Compact, Microfabricated Thermionic Devices, Jared Schwede, Spark Thermionics (N/A)
• AlN-based Piezoelectric Energy Harvesting, Mary Ann Maher, SoftMEMS (N/A)
• Tribute to John W. Coburn, David Graves, U.C. Berkeley
• How to Make Manufacturing of LEDs Truly Green, Prasad N. Gadgil, Atomic Precision Systems
• GaN HEMT Electronics for Extreme Environments, Saleh Kargarrazi, Stanford XLab
• Conversion Technologies for Generating, Transmitting, and Storing Energy, Joint Users Group Technical Symposium
• Selection of Battery and Charging Algorithm to Extend Battery and Cycle Life, Naoki Matsumura

July Agenda-Updates on New Technologies

• Introduction and IIT2020 Announcement, Sue Felch, Susan Felch Consulting
• Comprehensive Characterization of B+ Implanted Si after Rapid Thermal Annealing”, Woo Sik Yoo, WaferMasters
• Review of Applications of Defect Photoluminescence Imaging (DPLI) during IC Processing”, John Byrnes, Semilab (Not available)
• Aspects of Highly-Channeled MeV Dopant Implants in Si(100): Profiles & Defects”, Michael Current, Current Scientific
• Novel Approach to Remove Films at Room Temperature Isotropically & Atomically with Rapid Thermal Pulse Sequences”, Y.S. Kim, Lam Research (Not Available)
• Expand Laser Annealing for Low Thermal Budget Applications”, Shaoyin Chen, Ultratech/Veeco (Not Available)

2018

February Agenda-NCCAVS Joint Users Group Technical Symposium: Process, Materials, and Technology Innovation for Smart Devices, Displays, and Internet of Things

• Reliability for the 21^st Century: Meeting Challenges of New Technologies and New Markets, (Plenary Talk) Milena Vujosevic
• Development and R2R Scale up of a Hybrid Printed CMOS Silicon TFT Process, Patricia Beck, Thin Film Electronics
• Tool Design Considerations for Advanced Atomic Layer Deposition, Duane Bingaman, Kurt J. Lesker Company
• Electron Heating in Sputtering Magnetrons, Andre Anders, LBNL, Leibniz Institute of Surface Engineering
• Plasma-based Thin Film Depositions: Applications, Limitations, Our Improvements, and Case Studies in Battery, Photovoltaic, Non-volatile Memory, and Medical Devices Applications, George Guo, Ascentool Inc.
• Can a New Materials Innovation in Thin Film Optical Applications be Faster and Cheaper?, Guowen Ding, Labforinvention Corp.
• A Quantitative Approach to Optical Emission Spectroscopy, Frank Papa, Gencoa
• Thin Film Roadmap for Solid State Li Metal Batteries, Ernest Demaray, Demaray LLC
• Solid-state Thin Film Batteries in 3D, J.R. Gaines, Jr., Kurt J. Lesker Company

July Agenda-Updates on New Technologies & Devices: 2018

• • High Performance High Temperature Ion Implanter (IMPHEAT) for Manufacturing SiC Power Devices, Naoya Takahashi, Nissin Ion Equipment (N/A)
  • Dual Beam nSec Annealing for MOL & BEOL Applications, Shaoyin Chen, Ultratech/Veeco
  • A New Technology (ALPro^TM) for Depth Profiling of Electrical Properties at Atomic-Level Resolution, Abhijeet Joshi,  Active Layer Parametrics
  • A Quick Look at 14-nm and 10-nm Devices, Dick James, Siliconics
  • Atomic Level Material and Device Analysis for FinFET and Nanowire Design, Victor Moroz, Synopsys

2017

February Agenda-NCCAVS Joint Users Group Technical Symposium: Novel Materials, Processes, and Devices for Future Generation Electronics

• Mechanisms of Plasma Therapy (Plenary Talk), David Graves, UC Berkeley
• Large-Scale, Thin-Film Battery, Ernest Demaray, Demaray LLC
• Inkjet Printing for Manufacturing of Flexible and Large-Size OLEDs, Jeff Hebb, Kateeva
• Rapid Materials and Device Innovation for Non-Volatile Memory Applications, Larry Chen, Intermolecular
• BEOL Interconnect Innovations for Improving Performance, Paul Besser, Lam Research
• Nanoscale Chemical Imaging & Topography with Photo-induced Force Microscopy, Thomas R. Albrecht, Molecular Vista, Inc.
• Material Innovation for Non-Volatile Memory Selectors, Larry Chen, Mark Clark, Charlene Chen, Milind Weling, Intermolecular

July Agenda-Advances in Implantation & Anneal: 2017

• Smartphone Market Driving 7nm & 5nm Node 3-D Devices and Stacked Devices, John Borland, JOB Technologies
• Ultra-Shallow Junction Formation on 3D Silicon and Germanium Device Structures by Ion Energy Decoupled Plasma Doping, Y. S. Kim, Lam Research
• Junction formation in Ge by co-implant and pre-heating techniques, Takashi Kuroi, Nissin Ion Implant
• Low contact resistance on p-SiGe junctions with Ga implants and laser anneals, Fareen Khaja, Applied Materials
• PLAD advances:  Hot n-type implants and Control of sidewall doping, Deven Raj, Applied Materials
• Perspectives on low-energy ion (and neutral) implantation, Michael Current, Current Scientific
• Advances in Implantation and Annealing: 2017, Michael Current

October Agenda-Diverse Topics: PV, GaN, etc.

• • Achieving 100% Residential Renewables in Hawaii with Solar & Multi-Storage, John Borland, JOB Technologies
  • Hydrogen Implant and Cleaving to Unlock Previously Untapped Solar Real-Estate, Mingguo Liu, Rayton Solar
  • High Productivity Low Cost Ion Implant for Solar and Beyond, Lisa Mandrell, Babak Adibi, Arun Karamcheti, Intevac Inc.
  • Study of Mg Implant Damage in GaN using RBS channeling, TEM & Atom Probe, Udit Sharma, EAG
  • Ion Implant Applications to Enable Advances in Semiconductor Technologies, V.K. Rao, Applied Materials
  • Evaluation of crystal damage in Mg implanted GaN by RBS, 3D-Atom Probe and TEM, Kazuteru Takahashi, Kazue Shingu, Daniel Tseng, Udit Sharma, Wei Zhao, Jitty Gu, Mike Salmon, EAG Laboratories
  • High Productivity low cost Ion Implant for Solar and beyond, Lisa Mandrell, Xiaochun Lu, Weibo Guo, Babak Adibi, Arun Karamcheti, Intevac, Inc.
  • Hydrogen Implant and Cleaving to Unlock Previously Untapped Solar Real-Estate, Jeff Mc Kay, Ph.D., Rayton Solar
  • Achieving 100% Renewable Energy (Off-Grid) for Residential Hawaii with Solar Energy + MultiStorage, John Borland (J.O.B. Technologies), Jay Moore & Corpuz Poncho (Poncho’s Solar), and Takahiro Tanaka & Harumi McClure (Tabuchi Electric)

2016

February Agenda – Materials, Devices, and Systems for Intelligent Engineering Solutions

• NCCAVS Joint User Group Symposium Abstract Book and Exhibit Guide

July Agenda – New Processes and Tools for Implantation, Annealing and Metrologies

• Micro Four Point Probing for Advanced Nodes, Tom Karpowicz, CAPRES
• Efficacy & Cost Advantages are Driving Ion Implant Adoption in Commercial PV Cell Fabrication, Babak Adibi, Intevac
• Contact Resistance Reduction using Advanced Implant and Anneal Techniques for 7 nm Node and Beyond, Fareen Adeni Khaja, Applied Materials
• Medium Current Ion Implanter 3000AH-8C, Nobuhiro Tokoro, Nissin Ion
• Moore’s Law into the 1x-nm Era, Dick James, ChipWorks
• LXA: Nanosecond Laser Anneal for sub-10nm, Jim McWhirter, Ultratech
• Highlights of IWJT16, VLSI16 & IIT16, John Borland, JOB Technologies
• Characterization of Indium Doping Profiles by Lexes and Sims, Dimitry Kouzminov, Brad Bates, and Jerry Hunter (Accurel Systems); Pierre Staub, Chrystel Hombourger, and Michael Schuhmacher (Cameca); Houda Graoui, Amir Al-Bayati, and Majeed Foad ( Applied Materials, Inc.) 
• Capres Technology Roadmap 2016, Karpowicz, Capres
• Review of Key Papers From IWJT-2016 May 8-9, IEEE-PVSC 2016 June 6-10 & IEEE-VLSI Symposium 2016 June 14-16, John O. Borland, J.O.B. Technologies
• Introduction of Medium Current Ion Implanter EXCEED3000AH-8C – New 200mm Tool, Tokoro, Nissin Ion Equipment Co., Ltd.

2015

February Agenda – Technology Innovation for Next Generation Materials and Manufacturing

• Message from Indium Corporation, Jacques Matteau, Indium Corporation
• Low Emissivity (Low-E) Coating Technologies for Energy Saving Window Applications, Guowen Ding, Intermolecular
• 40 Years of Magnetron Sputtering: Still an Exciting Field for Discovery, Andre Anders, Lawrence Berkeley National Laboratory
• New Applications of Chemical Mechanical Polishing, Rob Rhoades, Entrepix, Inc.

July Agenda– Ion Implantation and Annealing: New Process and Products

• P, Sb and Sn Ion Implantation with Laser Melt-Liquid Phase Crystallization for n+ Ultra Shallow Junctions in Ge, John Borland, JOB Technologies
• Process Uniformity Improvements for LSA Millisecond Annealing in the FinFET Era, Jim McWhirter, Ultratech
• Recent developments with PULSION® PIII tool, Dean Turnbaugh, Ion Beam Services
• Leading Edge Silicon Devices, Dick James, Chipworks
• Doping Technology Options for High Efficiency c-Si Solar Cells, James Huang, Amtech
• Formation of n+/p Junctions less than 20 nm Deep in Ge and Diffusion Control by Flash Lamp Annealing (FLA), Scott Prengle, SCREEN
• Total Electrical Characterization for High Mobility Materials, Abhijeet Joshi, Active Layer Parametrics

2014

February – Nanomaterials for Energy, Biomedical, and Electronic Devices

• Biomedical Devices: Engineering’s Contributions to Improving Quality of Life, Guna Selveduray, San Jose State University
• Metal-Carbon Nanotube Contacts, Patrick Wilhite and Cary Yang, Santa Clara University
• Efficient Electromagnetic and Multiphysics Simulation – from Nanomaterials to Macro Devices, Mike Hook, Cobham Technical Services
• Controlled Nanoparticle Generation by Terminated Cluster Growth in a Sputtering Chamber, Andre Anders and Cesar Clavero, Lawrence Berkeley National Laboratory
• Implement Smell and Taste with Nano-sensor, Zhiyong Li, HP Labs

July Agenda – Ion Implantation and Annealing: New Process and Products

• Materials engineering for 7 nm finFETs, Victor Moroz- Synopsis
• Plasma doping of “hot” finFETs, Dean Turnbaugh- Ion Beam Services
• Elastomers for 30 C high-power implants for improved bipolar gain, Michael Current- Current Scientific (with CORE Systems and Texas Instruments/Freising)
• Extreme high-current beamlines, John Chen- Kingstone Semiconductor
• Heated ion implantation for SiC power devices, Yoshiki Nakashima- Nissin Ion Equipment
• Laser annealing for sub-20 nm devices, Jeff Hebb- Ultratech
• Implant dopant activation in Si and Ge, John Borland- Advanced Integrated Photonics
• Mobility and strain effects in doped junctions, Abhijeet Joshi- Active Layer Parametrics

October Agenda– FinFETs: Life on the Edge with Vertical CMOS Channels

• The long and winding road to finFETs: a bit of past, present and future, Witek Maszara, Global Foundries
• FinFET doping at 22nm, 14/16nm and 10nm nodes, John Borland, J.O.B Technologies
• Doping FinFETs: Tradeoffs for Beamline Implantation, Plasma Doping, and Diffusion from Doped Epi/CVD Films, Susan Felch, Susan Felch Consulting
• Plasma Doping (PLAD) Approaches for 3D FinFET Extensions, Deven Raj, Applied Materials
• A discussion of “damage engineering” in vertical fin arrays, Michael Current, Current Scientific

2013

February Agenda – Technology for Clean Energy

• Challenges and Solutions for More Sustainable Energy Systems, Stacey F. Bent, Stanford University
• Novel Plasmonic Materials for Energy-Related Devices, César Clavero, Ph.D., Lawrence Berkeley National Laboratory
• Process Development for Advanced Generation Crystalline Silicon Solar Cells, James Gee, Applied Materials
• Depth Profiling of Organic Photovoltaic and OLED Materials by Cluster Ion Beams, J.S. Hammond¹, S. N. Raman¹, S. Alnabulsi¹, N. C. Erickson² and R. J. Holmes²;  ¹Physical Electronics, ²University of Minnesota
• Thermoelectrics (TE) at the Nanometer and Sun to Fiber (S2F) at the Micrometer, Nobuhiko “Nobby” Kobayashi, University of Santa Cruz
• Measurement of CdTe Ratio for Composition Control, Gary Mount, Larry Wang and Wesley Nieveen, Evans Analytical Group
• Sunny Future for the Solar Industry, KRS Murthy, I3 Solar
• Nanostructured Energy Conversion for Low‐power Energy Harvesting Devices and Beyond for High-power ‘Sun‐to‐fiber’ Solar Devices, Michael Oye and Nobuhiko “Nobby” Kobayashi, University of California, Santa Cruz
• Advances in MOCVD Process and Equipment Technology Enabling Solid State Lighting, G.D. Papasouliotis and Wei Zhang, Veeco Instruments, Inc.
• Technology and Economic Considerations for High Volume HBLED Lithography Manufacturing, Manish Ranjan, Ultratech

June Agenda –

• High Mobility Ge-Channel Formation By Localized/Selective Liquid Phase Epitaxy (LPE) Using Ge+B Plasma Ion Implantation And Laser Melt Annealing, John Borland (J.O.B. Technologies), Shu Qin(Micron Technology), Peter Oesterlin (Innovavent), Karim Huet (Excico), Walt Johnson (KLA-Tencor), Lauren Klein (EAG), Gary Goodman (EAG), Alan Wan (EAG), Steven Novak (CNSE), Thomas Murray (CNSE), Richard Matyi (CNSE), Abhijeet Joshi (UCLA) and Si Prussin(UCLA)

July Agenda – Ion Implantation and Annealing: New Process and Products

• Leading Edge Si Devices: an Update, Dick James, Chipworks
• Microwave and RTA Annealing of Phos-doped, Strained Si(100) and (110) Implanted with Molecular Carbon Ions, Michael I. Current, Current Scientific; Yao-Jen Lee, National Nano Device Laboratories; Yu-Lun Lu,Ta-Chun Cho, Tien-Sheng Chao, Dept. of Electrophysics, National Chiao Tung University; Hiroshi Onoda, Karuppanan Sekar, Nobuhiro Tokoro, Nissin Ion Equipment
• Low Temperature Oxidation/Nitridation Processes enabling Advanced Junctions, Wilhelm Kegel, Wilfried Lerch, Jeff Gelpey, centrotherm photovoltaics
• Laser Spike Annealing for FinFETs, Jeff Hebb, Ph.D., Ultratech
• Junction Evaluation using Electron Beam Induced Current (EBIC), Gary Mount, Mike Salmon, Evans Analytical Group
• Damage Control by Cluster implantation and heated implantation, Yoshiki Nakashima, Shigeki Sakai, Tsutomu nagayama, Hiroshi Onoda, Nissin Ion Equipment Co., Ltd.
• Advanced Metrology Solutions, Taylor, Cameca

2012

February – Technology for Clean Energy

July Agenda – 2012 Update on Junction Technology For Solar & Semiconductor

• Flat-Top Flash Annealing™ For Advanced CMOS Processing, Paul Timans, Gary Xing, Silke Hamm, Steve McCoy, Joseph Cibere, Greg Stuart, and David Camm, Mattson Technology
• Simulation Study of Conformal Doping by Conventional Beam Line Ion Implantation and Momentum Transfer Implantation and USJ capability of LEDA, Michiro Sugitani, Genshu Fuse, Hiroki Murooka, Seiji Uemura, Masashi Kuriyama, and Masaru Tanaka, SEN Corporation
• Applications of Cluster Carbon – a Review, Karuppanan Sekar, Nissin Ion Equipment USA Inc.
• Microprobe Metrology for direct Sheet Resistance and Mobility characterization, Peter Folmer Nielsen, Capres
• Ultra Low Thermal Budget Laser Thermal Annealing for 3D Semiconductor and Photovoltaic Applications, Karim Huet, Ph.D., Excico
• Engineering Advanced Solar Cells with High Throughput Ion Implantation, Henry Hieslmair, Intevac
• Laser Spike Annealing for sub-28nm Non-Junction Activation Applications, Jeff Hebb, Ph.D., Ultratech, Inc.
• A Review of IBS-related Papers at IIT12, Mike Current, Current Scientific
• Selective and Homo Emitter Junction Formation Using Precise Dopant Concentration Control by Ion Implantation and Microwave, Laser or Furnace Annealing Techniques, John Borland (J.O.B. Technologies), Victor Moroz¹, Joanne Huang¹, John Chen (Kingstone), Yao-Jen Lee (National Nano Device Laboratories), Peter Oesterlin (Innovavent GmbH), Peter Venema², Henri Geerman², Peter Zhao³, and Larry Wang³; ¹Synopsys, ²Tempress Systems B.V., ³Evans Analytical Group
• FI Silicon, Bert Allen, Factory Integration Solutions LLC

2011

February – IEDM/RTP Conference Reviews and Junction-Annealing Related Topics

February Agenda – NCCAVS Joint User Group Topical Conference on Photovoltaic Technology

• Characterization of Dopant Activation, Mobility and Diffusion in Advanced Millisecond Laser Spike Annealing, Shaoyin Chen¹, Xiaoru Wang¹, Yun Wang¹, Cam Lu¹, and Jim McWhirter^{1 1}Ultratech Inc., and Michael Thompson (Cornell University)
• Rapid Thermal Processing 2010, Michael Current, Current Scientific
• Review of IEDM 2010 Conference, Susan Felch, Ion Beam Services
• DSG Process Applications, Jeffrey Kowalski, DSG Technologies
• High Performance Germanium N-MOSFET with Antimony Dopant Activation Beyond 1×10²⁰ cm-³, G. Thareja¹, J. Liang¹, N. Patil¹, S. -L. Cheng¹, A. Nainani¹, E. Tasyurek¹, J. McVittie¹, T. Kamins¹, K. Saraswat¹, and Y. Nishi^1,; S. Chopra², Y. Kim², B. Adams², and S. Moffatt² ; R. Brennan^{3;  1}Stanford University, ²Applied Materials Inc., ³Solecon Laboratories
• IEDM 2010 Short Course 15nm CMOS, P.J. Timans
• Trends in Photovoltaics, Dr. Peter Borden, Jasper Ridge LLC
• Kerf-Free Wafering: Technology Overview, Adam A. Brailove, Ph.D., Silicon Genesis Corporation
• Precision Process Power and Controls for Photovoltaic Manufacturing, Randy Heckman, Advanced Energy
• Modeling and Optimization of Silicon Solar Cells, Victor Moroz, Synopsys
• Characterization of Contamination in PV Materials, Ian Mowat, Karol Putyera, Larry Wang, Temel Buyuklimanli and Gary Mount, Evans Analytical Group
• The Flip Side of Technology: how plasma systems must evolve for solar PV applications, E. Ryabova, A. Skumanich, SolarVision Consulting
• The State of the PV Industry – An Association Perspective, Karen Savala, SEMI Americas
• For a Sunny Future, Roth & Rau

July – Semiconductor and Solar Junction Technology

• Industrial BBr3 Boron Furnace Doping for High-Efficiency N-type Cells, James Hwang, Amtech/Tempress, Ard Vlooswijk, Tempress Systems BV
• Applied Vantage Vulcan™ RTP – Optimizing Spike Anneals for 32nm and Beyond, Wolfgang Aderhold, Ph.D., Applied Materials
• p/n-Junction Formation for Advanced High Efficiency Solar Cells: Theory, Technology, Equipment, Dr. Wolfgang Herbst, centrotherm photovoltaics
• DSG Process Applications, Jeffrey Kowalski, DSG Technologies
• Plasma Doping of Silicon Fin Structures, S. Felch, C. Hobbs, J. Barnett, H. Etienne, J. Duchaine, M., Rodgers, S. Bennett, F. Torregrosa, Y. Spiegel, and L. Roux
• Key Junction Technology Points From: IWJT-2011 & VLSI Symposium 2011 for TriGate and UTBB-SOI, John Borland, J.O.B. Technologies
• Effects of Cluster Carbon Implantation at Low Temperature on Damage Recovery after Annealing, Hiroshi Onoda, Nissin Ion Equipment Co., ltd
• Non-contact metrology for Advanced Emitter Structures, Andrew Findlay, Semilab
• New Combination of Damage Control Techniques Using SEN’s Single-wafer Implanters, Michiro Sugitani, SEN Corporation
• Design, Modeling, and Optimization of Silicon Solar Cells and Modules, Victor Moroz
• The case for thin film silicon solar: Technical Challenges and Opportunities, Kunal Girotra, Thin Silicon
• Measurement of Strain Enhanced Mobility, UCLA
• Laser Spike Laser Spike Annealing for 20nm and Beyond, Jeff Hebb, Ph.D.,Ultratech, Inc

2010

May – Photovoltaic Junctions

• Photovoltaics: status, issues and promise, Peter Borden
• Atomistic modeling of Solid Phase Epitaxial Regrowth using Lattice Kinetic Monte Carlo: Facet formation and strain dependencies, Ignacio Martin-Bragado and Victor Moroz, Synopsys
• Russell Ohl: The “Forgotten” Bell Labser – Discoverer of the p-n junction Inventor of the Si “solar cell First to implant ions into Si, Michael I. Current, Current Scientific
• Metrology & Inspection for PV, Johnson, KLA Tencor

July – New Junction Fabrication Capabilities: Implanters, Annealers, Materials and Metrology

• 22nm & 15nm Node Junction Scaling Options, John Borland, J.O.B. Technologies
• PULSION® HP: Tunable, High Productivity Plasma Doping, S.B. Felch, F. Torregrosa, H. Etienne, Y. Spiegel, L. Roux, and D. Turnbaugh, Ion Beam Services
• Optimizing the Synergy Between Thermal Wave and Sheet Resistance Measurements for the 15nm Node, Walt Johnson
• Molecular Implant for Advance USJs, Wade Krull, SemEquip
• Advanced Anneal Solutions for Silicides, Shankar Muthukrishnan, Applied Materials
• Millios™ – millisecond flash anneal for 22nm node, Sing-Pin Tay, Mattson Technology, Steve McCoy, Mattson Technology Canada

September – Papers from IIT 2010: Toxic gas capture, in-situ cleans, PIII profiles, etc.

• PAI & Halo ion effects on junction activation and leakage presented at IIT10, Michael Current, Current Scientific
• A Safe Solution to Dopant Gas Desorption from Metal Surfaces, Maki Egami, Takachiho Chemical Industrial Co., Ltd
• PULSION® HP: Tunable, High Productivity Plasma Doping, S.B. Felch, F. Torregrosa, H. Etienne, Y. Spiegel, L. Roux, and D. Turnbaugh, Ion Beam Services
• In-situ F cleaning of implanters by remote plasma generation, Thomas N. Horsky, SemEquip

2009

July – Update on Advanced Metrologies and Processing for CMOS Junction Formation

• Activation & EOR Monitoring Using Therma-Probe, Salnik, KLA-Tencor
• The Application of the Continuous Anodic Oxidation Technique for the Evaluation of State-of-the-Art Front-End Structures, Si Prussin, University of California, Los Angeles
• Recent Advances in Flexibly Shaped Pulse Flash Annealing – FSP FLA, Peter D. Nunan, Synchonize!
• ClusterBoron technology for <10nm junctions, Wade Krull, SemEquip
• The 4PP: Obsolete or Timeless, Walt Johnson, KLA-Tencor
• CMOS Leakage Reduction using Laser Spike Annealing, Jeff Hebb, Ph.D., David Owen, Yun Wang, Shrinivas Shetty, Van Le, Shaoyin Chen, Andy Hawryluk, Ultratech, Inc.
• Metrology Methods for Analysis of Advanced Junctions: Advances in SIMS Characterization of Shallow B, P, As Distributions in Si, Temel Büyüklimanli, John Marino, Ihab Abdelrehim, Ming Hong Yang, Jeff Mayer, Bob Hengstebeck and Charles Magee, Evans Analytical Group
• Thermal Processing Issues For 22nm Node Junction Scaling, John Borland (J.O.B. Technologies), Susan Felch, Zhimin Wan (AIBT), Masuyasu Tanjyo (Nissin), Temel Buyuklimanli (EAG)
• Implant Process Characterization With Modern In-line Metrologies, Benjamin, Semilab

2008

January Agenda – Highlights of 2007 and a look ahead to 2008

• A Comparative Study of Size Dependent Four-Point Probe Sheet Resistance Measurement on Laser Annealed Ultra Shallow Junctions, D.H. Petersen (MIC, ¹), R. Lin¹, T.M. Hansen (MIC, ¹), E. Rosseel (IMEC), W. Vandervorst (IMEC, K.U. Leuven), C. Markvardsen¹, D. Kjaer¹, P.F. Nielsen^{1,  1}Capres

July – SJ Formation for 32nm Node

• TW Metrology For Implant And Annealing At 32 nm Node, Alex Salnik, KLA-Tencor Corp.
• Modeling Evolution of Temperature, Stress, Defects, and Dopant Activation in Silicon During Spike and Millisecond Annealing for 32 nm mode, Ignacio Martin-Bragado, Victor Moroz, Synopsys
• Cluster Implant for 32nm, Wade Krull, SemEquip
• Flash Lamp Annealing Technology Update for 32nm node, Hiroki Kiyama, Screen (CONFIDENTIAL)
• Laser Spike Annealing for 32nm and beyond, Jeff Hebb, Yun Wang, and David Owen, Ultratech, Inc.
• Single Wafer Implantation Process Matching, Mark Harris (Axcelis Technologies), M.S. Ameen, L.M. Rubin, T.H. Huh, K.W. Lee, R.N. Reece, G.J. Ra, C. Huynh (Zeiss)
• Challenges and Solutions for 32nm Node Ultra-Shallow Junctions, S.B. Felch, T. Hoffmann, T. Noda, C. Ortolland, E. Rosseel, R.Schreutelkamp, P. Absil and W. Vandervorst
• Infusion Doping for USJ Applications with Gas Cluster Ion Beam Processing, Nate Baxter, TEL-Epion

October – Damage, Defects, Strain and Leakage

• In-line Process and Equipment Performance Monitoring using Site Flatness and Raman Mapping – Characterization of Process Footprints, Woo Sik Yoo, WaferMasters, Inc.
• Strain Effects in Millisecond Laser Annealing, Y. Wang, D. Owen, S.Y. Chen, S.Q. Zhou, M. Shen, X.R. Wang, J. Hebb, A. Hawryluk, Ultratech Inc.
• Metrology of Defect Annealing in Advanced USJ Formation Processes, P. J. Timans, Y. Z. Hu, Y. Lee, J. Gelpey, S. McCoy, W. Lerch , and S. Paul (Mattson Technology), D. Bolze (IHP) and H. Kheyrandish (CSMA Ltd.)
• The Application of the Continuous Anodic Oxidation Technique for the Evaluation of State-of-the-Art Front-End Structures, Si Prussin, University of California, Los Angeles
• Modeling Stress, Defect Evolution, and Junction Leakage, Victor Moroz, Synopsys
• Carrier Recombination, Leakage Current and all that….. , Michael I. Current, Current Scientific

December – Implant Safety: “Hands-off” Cleans & Conditioning, Toxic Ions, Radiation

• Safety and Tool Contamination Issues When Using Indium Trichloride for Indium Implants in Varian E500 Implanters, Danny Rosenblatt, Maxim Integrated Products
• ATMI AutoClean® Predictable Process. Extended Source Life. The First and Only In-Situ Implanter Cleaning Process, Mayer, ATMI
• Ion Implantation for Fabrication of Semiconductor Materials & Devices, Michael I. Current (Current Scientific), Nicholas R. White (Albion Systems)
• Krytek-300 Ion Source Conditioner, Burt Allen, CoreSystems

2007

May –

• Influence of Halo Implant on Leakage Current and Sheet Resistance of Ultra-Shallow P-N Junctions, V.N. Faifer, Frontier Semiconductor

July –

• Flash Annealing For USJ Activation, Jeff Gelpey, Mattson Technology Canada
• Photoluminescence metrology for global wafer and micro implant and anneal uniformity, Chris Raymond, Nanometrics
• Advanced Implant and Junction Metrology for 45 nm and Beyond, Alex Salnik, KLA-Tencor
• Performance of Laser Annealed Junctions in Advanced CMOS Devices, S.B. Felch (Applied Materials), B.J. Pawlak (XNP Semiconductors), T. Hoffmann (IMEC), E. Collart (Applied Materials), S. Severi (IMEC), T. Noda (IMEC, Matsushita Electric Industrial Co.,), V. Parihar (Applied Materials), P. Eyben (IMEC), W. Vandervorst (IMEC), S. Thirupapuliyur (Applied Materials), and R. Schreutelkamp (Applied Materials)
• Applications of Flash Lamp Annealing, H. Kiyama, Synchronize!
• PULSION®, the Ion Implant Solution for sub 45nm, Laurent Roux, IBS
• Flash Annealing For USJ Activation, Jeff Gelpey, Mattson Technology Canada
• Advantages of Ion Cluster Implantation In CMOS Manufacturing, Thomas Horsky, SemEquip
• Device Variability and USJ Implant & Anneal Options Limited by Strain-Si and Highk Gate Process Integration, John Ogawa Borland, J.O.B. Technologies
• Use of Co-Implantation to Extend Spike RTP to the 65nm Node and Beyond, Susan Felch, Houda Graoui, Erik Collart, and Majeed A. Foad, Applied Materials, Inc.

September –

• High Resolution Mapping of Sheet Resistance of Ultra Shallow Implants Can Reveal Implanter or Anneal Non-Uniformities, C. Kohn, E. Don, P. Tüttö, A. Pap, T. Pavelka (Semilab)

2005

May –

• Electrical Issues in Process Integration of SDE/Halo CMOS Junctions, Michael Current, Frontier Semiconductor
• Advanced Anneal Metrology Using BX-10, Edward Budiarto, In-line Electrical Metrology, PDC Business Group
• Advances in ion Implant and USJ Metrology, Therma-Wave
• Full Wafer Analysis of Ion Implanted Wafers and Thin Films by Low Energy X-Ray Emission Spectometry (LEXES), Charles Hitzman, Charles Evans, Full Wafer Analysis
• Dose Quantification for Low and Ultra-Low Energy (ULE) Shallow Implants by SARIS™ Laser Ablation ICP-MS, Fuhe Li, Donna Sam, and Scott Anderson, Air Liquide Electronics
• Cluster Implants for Advanced Productivity, Dr. Leonard Rubin, Axcelis Technologies

June –

• Infusion Doping for USJ Semicon 2005, Matthew Gwinn, Epion Corporation

July –

• Plasma Doping (PLAD) for Advanced USJ Applications, S. Walther, L. Godet, T. Büyüklimanli, J. Weeman, R. Liebert, & P. Nunan, Varian Semiconductor Equipment
• Cluster Implantation, Tom Horsky, SemEquip
• B10H14 Implantation for 45nm Node USJ Doping, Masayasu Tanjyo, Nariaki Hamamoto, Sei Umisedo, Tsutomu Nagayama, Masao Naito, Nobuo Nagai, Nissin Ion Equipment, Ltd.
• Flash Lamp Annealing, J. C. Gelpey, S. M. McCoy, D. M. Camm, G. Stuart, (Mattson Technology Canada); Wilfried Lerch (Mattson Thermal Products GmbH)
• Issues & Innovations For 45nm Node USJ Formation (Activation, Metrology & Doping), John O. Borland, J.O.B. Technologies

November –

• Elimination of Poly-Si Gate Depletion for Sub-65nm CMOS Technologies by Excimer Laser Annealing, Hiu Yung Wong, Hideki Takeuchi, Alvaro Padilla, and Tsu-Jae King (University of California, Berkeley); Michael Ameen and Aditya Agarwal (AxcelisTechnologies Inc.)
• Flash-Assisted RTP for Advanced Ultra-Shallow Junctions, P. J. Timans, Mattson Technology
• Ni2Si and NiSi Formation by Low Temperature Soak and Spike RTPs, Eun-Ha Kim, Peter B. Griffin, James D. Plummer (Stanford University);  Hali Forstner, Majeed Foad, Norman Tam, Sundar Ramamurthy (Applied Materials)
• Ultra-Shallow Junctions for 65 nm Devices and Beyond, Susan Felch, Applied Materials
• Crunch Time Cometh for SDE Doping Engineering: Messages in ITRS05……. ,Michael Current, Frontier Semiconductor

2004

April –

• Precision Alignment of the GSD End Station, John Schuur, INNOViON, Inc. 
• Ultra-Shallow Junctions with Shallow Junctions with PLAD, Jinning Liu, Varian Semiconductor Equipment Associates
• Junction Scaling Technology for the Sub 90nm Node and beyond, Jack Hwang, Hal Kennel, Paul Packan, Mitch Taylor, Mark Liu, Robert James, Intel Corporation
• Ultra-Shallow Junction Formation Techniques to Satisfy Advanced Device Requirements, Susan Felch, Applied Materials

2003

May Agenda –

• Ultra-shallow Junctions 2003: Process Papers: Ap30-May1,’03, Michael Current, Current Scientific

July –

• Productivity Plus Productivity Plus Option / Upgrade Option / Upgrade E220 / E500 Series Implanter E220 / E500 Series Implanter, Varian Semiconductor Equipment
• Ultra-Shallow Junction Technologies for Volume Manufacturing beyond the 90 nm Node, P. J. Timans, W. Lerch, S. Paul, J. Niess, N. Acharya & Z. Nenyei, Mattson Technologies
• New Technology for Thermal Processing, John Foggiato, WaferMasters, Inc.

2002

May –

• Ion Implanter Issues . . . (and Solutions), Tyson Grant, Electro-Graph
• Ion Implant Presentation, Lowell Johnson, Toyo Tanso 
• Refractory Metals – Production and Implant Applications, John Shields, H.C. Starck, 
• What I Like and Dislike About My Applied Materials 9500xR Implanters, Danny Rosenblatt, Maxim Integrated Products
• Things That are No Longer Disliked, Mike Cunneen, Signet

July –

• Recent Advances in Implant Metrology with the Shallow Probe LEXES Tool, P.-F.Staub, C.Hombourger, M.Schuhmacher, Cameca
• Update on Implant Dopant Materials, Jim Mayer, ATMI Inc.
• Plasma Doping as a Tool for the Fabrication of Advanced Semiconductor Devices, Varian Semiconductor Equipment
• Ion Implantation – A Web-based Course from SemiZone, Dr. Michael Current, SemiZone
• Spike RTP for Ultra-Shallow Junction Formation, Paul Timans, Mattson Technologies