NCCAVS Junction Technology Group (JTG) Meeting
Date & Location:
July 14, 2017
1:00 p.m. – 4:30 p.m.
810 Kifer Road
1:00-1:30pm John Borland, JOB Technologies, “Smartphone Market Driving 7nm & 5nm Node 3-D Devices and Stacked Devices”
1:30-2:00pm Y.S. Kim, LAM Research, “Ultra-Shallow Junction Formation on 3D Silicon and Germanium Device Structures by Ion Energy Decoupled Plasma Doping”
2:00-2:30pm Takashi Kuroi, Nissin Ion Implant, “Junction Formation in Ge by Co-implant and Pre-heating Techniques”
2:30-3:00pm Fareen Khaja, Applied Materials, “Low Contact Resistance on p-SiGe Junctions with Ga Implants and Laser Anneals”
3:30-4:00pm Deven Raj, Applied Materials, “PLAD Advances: Hot n-type Implants and Control of Sidewall Doping”
4:00-4:30pm Michael Current, Current Scientific, “Perspectives on Low-energy Ion (and Neutral) Implantation”
All presentations will be requested to be posted on the JTG Proceedings webpage approximately 1-2 weeks following the meeting.